[3/11/2019]: Global MOSFET power devices market is anticipated to witness an exponential growth in
the forecast period. A metal–oxide–semiconductor field-effect transistor
(MOSFET) is used as an electronic switch device and is a type of power
semiconductor. It is a profitable substitute to bipolar junction transistor
(BJT).
Factors
such as growing sales of electronics, the demand for power semiconductor
components, lower efficiency of devices at low voltages, technological
advancement, increasing demand from key end users, and adopting power MOSFET to
increase the efficiency of operations involving high switching speeds are
likely to drive the MOSFET power device market in the forthcoming period.
On
the other hand, high implementation price and current outflow are anticipated
to hinder MOSFET power devices market growth in the future. However, improved
effectiveness and durability have increased the rate of acceptance of power
MOSFET in energy & power, consumer electronics. MOSFET power device market
is anticipated to expand at a significant CAGR in the upcoming period as the
scope, product types, and its applications are increasing across the globe.
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The
market could be explored by type, application, and geography. Market could be
explored by type as MOSFET Power Module and MOSFET Discrete. Market could be
explored by Power rate as High Power, Low Power and Medium Power.
The
key applications that could be explored in the MOSFET power devices industry
include Consumer, Industrial Drives, Renewables, Traction, Automotive, and
Other. The “Automotive” segment accounted for a prominent share in the market.
It is likely to witness a substantial growth in the years to come.
Key
players operating in the MOSFET power devices market include Renesas, Infineon,
Panasonic, Toshiba, Mitsubishi Electric, Hitachi, Bosch, STMicroelectronics,
Raytheon, and Sumitomo Electric. The leading companies are taking up
partnerships, mergers and acquisitions, and joint ventures in order to boost
the inorganic growth of the industry.
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